DocumentCode :
1932202
Title :
The application of limited reaction processing to the deposition of silicon carbide layers
Author :
Ruddell, F.H. ; McNeill, D.W. ; Armstrong, B.M. ; Gamble, H.S.
Author_Institution :
Institute of Advanced Microelectronics, School of Electrical Engineering and Computer Science, The Queen´´s University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH.
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
357
Lastpage :
360
Abstract :
This paper describes the deposition of microcrystalline silicon carbide in an LRP reactor using silane/propane gas chemistry and discusses the performance of heterojunction bipolar transistors using N-SiC emitters.
Keywords :
Cogeneration; Conducting materials; Heterojunctions; Inductors; Lamps; Photonic band gap; Plasma temperature; Silicon carbide; Temperature control; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436343
Link To Document :
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