DocumentCode
1932206
Title
Effects of magnetic fields on the 1s-2p± transitions in low-dimensional systems
Author
Niculescu, Ecaterina C.
Author_Institution
Dept. of Phys., Politehnic Univ. of Bucharest, Romania
Volume
1
fYear
2001
fDate
2001
Firstpage
87
Abstract
An approach is presented for studying the effects of the axial magnetic field on the binding and 1s-2p± transition energies of shallow-donors in cylindrical pills of GaAs low-dimensional systems. Results for the infinite-barrier potential are obtained as a function of the structure geometry and the applied field. In the two and three-dimensional limits the comparison with previous theoretical data and with available infrared magnetospectroscopy measurements shows that the present calculation is quite accurate
Keywords
III-V semiconductors; Landau levels; binding energy; effective mass; gallium arsenide; magneto-optical effects; semiconductor quantum dots; GaAs; axial magnetic field effects; binding energies; bound excited states; cylindrical pills; effective mass approximation; infinite-barrier potential; infrared magnetospectroscopy; low-dimensional systems; optical phenomena; quantum confinement; quantum dot; structure geometry; three-dimensional limits; transition energies; two-dimensional limits; Atomic measurements; Electrooptic effects; Gallium arsenide; Impurities; Magnetic field measurement; Magnetic fields; Quantum mechanics; Quantum wells; Wave functions; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967423
Filename
967423
Link To Document