DocumentCode :
1932220
Title :
Effects of Substrate Tilting in Substantial Improvement of Dc Performance of Aigaas/gaas Npn Dhbt´s Grown by Mbe
Author :
Chand, N. ; Berger, P.R. ; Dutta, N.K.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Current measurement; Double heterojunction bipolar transistors; Fingers; Gain measurement; Gallium arsenide; Geometry; Impurities; Performance gain; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664721
Filename :
664721
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1932220
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