• DocumentCode
    1932273
  • Title

    Tunnelling in implanted emitter-base junctions in a low-power UHF process

  • Author

    Schlicht, B. ; Strobel, L.

  • Author_Institution
    Philips GmbH, Röhren- und Halbleiterwerke, D-2000 Hamburg 54, FRG
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    Tunneling currents in reverse-biased emitter-base junctions were investigated for different implanted base profiles in a low-power UHF process. A trade-off had to be found between improvement of the reverse I-V characteristic of the NPN´s EB junction and deterioration of the device´s HF performance. A semi-theoretical description of the experimental findings is given.
  • Keywords
    Boron; Current measurement; Doping; Electrical resistance measurement; Hafnium; Noise figure; Noise measurement; Surface resistance; Temperature dependence; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932273