2D physics-based compact model for channel length modulation in lightly doped DG FETs

Author

Weidemann, Michaela ; Kloes, Alexander ; Schwarz, Mike ; Iniguez, Benjamin

Author_Institution

Univ. of Appl. Sci. Giessen-Friedberg, Giessen, Germany

fYear

2009

fDate

25-27 June 2009

Firstpage

387

Lastpage

391

Abstract

In here a model for the shortening of the channel in saturation is developed from a 2D analytical solution of Poisson´s equation. The model inherently includes 2D effects by solving the differential equation with conformal mapping technique and does not introduce unphysical fitting parameters. Also these fitting parameters have only a minor influence on the model results. We compared our model to numerical data based on TCAD Sentaurus simulations and it is in good agreement with the results.

Keywords

Poisson equation; conformal mapping; field effect transistors; semiconductor device models; technology CAD (electronics); 2D Poisson equation; 2D physics-based compact model; Sentaurus; TCAD; channel length modulation; conformal mapping; differential equation; fitting parameters; lightly doped DG FET; Conformal mapping; Differential equations; Electric potential; FETs; Integrated circuit modeling; MOSFET circuits; Numerical models; Poisson equations; Solid modeling; Voltage; 2D Poisson; Analytical closed-form; Channel-length-modulation; DG; High-field region;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference

Conference_Location

Lodz

Print_ISBN

978-1-4244-4798-5

Electronic_ISBN

978-83-928756-1-1

Type

conf

Filename

5289454