Photoluminescence of GeSi/Si (001) self-assembled islands with dome and hut shape

Author

Shaleev, Mikhail V. ; Krasilnik, Zakhary F. ; Lobanov, Dmitriy N. ; Novikov, Alexey V. ; Vostokov, Nikolay V. ; Yablonsky, Artem N.

Author_Institution

Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia

fYear

2003

fDate

1-4 July 2003

Firstpage

27

Lastpage

30

Abstract

In this paper, we study the growth and photoluminescence (PL) spectra of GeSi/Si (001) self-assembled islands grown in a wide range (T_g=460°C+700°C) of Ge deposition temperatures. A structures with Ge hut islands with a height of <1 nm and a surface density of >2.0·10¹¹ cm² were grown. The blue-shift of the island related photoluminescence peak was observed during the island shape transition from dome to hut at T_g=580°C. The position of the island PL peak for structures grown at Tg≤ 550°C is slightly red-shifted with a decrease of T_g. This shift is associated with suppression of changes in the composition and height of islands with a lowering growth temperature of the Si cap layer.

Keywords

Ge-Si alloys; elemental semiconductors; island structure; molecular beam epitaxial growth; nanostructured materials; photoluminescence; semiconductor materials; silicon; spectral line shift; 460 to 700 degC; 580 degC; GeSi-Si; GeSi/Si (001) self-assembled islands; Si cap layer; blue-shift; deposition temperatures; dome shapes islands; hut shaped islands; island composition; island height; island shape transition; nanoisland growth; photoluminescence peak; photoluminescence spectra; red-shift; solid source molecular beam epitaxial growth; surface density; Assembly; Atomic force microscopy; Germanium silicon alloys; Nanostructures; Photoluminescence; Self-assembly; Shape; Silicon germanium; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on

Print_ISBN

5-7782-0412-4

Type

conf

DOI

10.1109/SREDM.2003.1224174

Filename

1224174