DocumentCode :
1932395
Title :
Effect of surface acoustic wave on photoluminescence of silicon nanocrystals
Author :
Vandyshev, Evgeny N. ; Zhuravlev, Konstantin S. ; Gilinsky, Alexander M. ; Skorupa, Wolfgang
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
fYear :
2003
fDate :
1-4 July 2003
Firstpage :
31
Lastpage :
32
Abstract :
The effect of the electric field generated by the application of surface acoustic waves on the photoluminescence of silicon nanocrystals embedded in SiO2 films was studied. It is shown that the application of surface acoustic waves with a field amplitude of about 6 kV/cm resulted in an increase of the intensity of nanocrystal photoluminescence. The results are discussed within the framework of the self-trapped exciton model.
Keywords :
elemental semiconductors; excitons; nanostructured materials; photoluminescence; silicon; surface acoustic waves; SAW field amplitude; SAW generated electric field; Si-SiO2; photoluminescence intensity; self-trapped exciton model; silica film embedded silicon nanocrystals; surface acoustic waves; Acoustic waves; Annealing; Excitons; Luminescence; Nanocrystals; Photoluminescence; Physics; Radiative recombination; Silicon; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
Type :
conf
DOI :
10.1109/SREDM.2003.1224175
Filename :
1224175
Link To Document :
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