DocumentCode
1932419
Title
Surface passivation layers for multicrystalline silicon solar cells
Author
Ponce-Alcántara, S. ; Cañizo, C. Del ; Luque, A. ; Wright, Daniel N.
Author_Institution
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
fYear
2005
fDate
2-4 Feb. 2005
Firstpage
295
Lastpage
298
Abstract
Both silicon oxide and silicon nitride have the potential to efficiently passivate phosphorus emitters of silicon solar cells. A comparison of the two techniques is carried out in this work for multicrystalline substrates. Optimization of deposition conditions for silicon nitride by remote PECVD leads to very low surface recombination velocities under 200 cm/s.
Keywords
amorphous semiconductors; passivation; plasma CVD; silicon; solar cells; surface recombination; PECVD; Si-SiN; Si-SiO/sub 2/; deposition optimization; multicrystalline silicon solar cells; multicrystalline substrates; silicon nitride; silicon oxide; surface passivation layers; surface recombination; Conductivity; Oxidation; Passivation; Photovoltaic cells; Plasma applications; Plasma temperature; Silicon compounds; Spontaneous emission; Substrates; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2005 Spanish Conference on
Conference_Location
Tarragona
Print_ISBN
0-7803-8810-0
Type
conf
DOI
10.1109/SCED.2005.1504384
Filename
1504384
Link To Document