Title :
The suspended-gate MOSFET (SG-MOSFET): a modeling outlook for the design of RF MEMS switches and tunable capacitors
Author :
Pott, Vincent ; Ionescu, A.M. ; Fritschi, R. ; Hibert, C. ; Fluckiger, P. ; Declercq, Michel ; Renaud, Pierre ; Rusu, Ana ; Dobrescu, D. ; Dobrescu, Lidia
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pull-in voltages and of the capacitance switching and tuning ranges for RF applications. A quasi-analytical model is developed for the gate-to-substrate capacitance of the SG-MOSFET and then, validated by numerical simulation. A SPICE macromodel using a polynomial voltage-controlled source is validated for the DC simulation of the SG-MOSFET. Guide lines for the low-voltage design of an SG-MOSFET RF switch are detailed
Keywords :
MOSFET; SPICE; UHF field effect transistors; capacitance; electrostatic actuators; equivalent circuits; field effect transistor switches; microwave switches; semiconductor device models; tuning; varactors; DC simulation; MEMS device; MOSFET RF switch; RF applications; SG-MOSFET; SPICE macromodel; capacitance switching; coupled-electromechanical equations; gate-to-substrate capacitance; low-voltage design; modeling; numerical simulation; polynomial voltage-controlled source; pull-in voltages; quasi-analytical model; suspended gate actuation; suspended-gate MOSFET; tuning ranges; Capacitance; Equations; MOSFET circuits; Microelectromechanical devices; Numerical simulation; Polynomials; Radio frequency; SPICE; Switches; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967431
