• DocumentCode
    1932435
  • Title

    Gate oxide integrity and hot-carrier degradation of TaSi2P+ polycide gate MOSFETs

  • Author

    Schwalke, U. ; Hansch, W. ; Kerber, M. ; Lill, A. ; Neppl, F.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Munich 83, FR Germany; IBM, Essex-Junction, VT 05452, USA
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    In this contribution we report on boron doped TaSi2/polySi gates which provide low sheet resistance, the appropriate p+ workfunction and simultaneously suppress boron-penetration effects. Gate oxide integrity, hot-carrier degradation and performance of TaSi2 p+ polycide NMOS and PMOS FETs are evaluated and compared to equivalent n+ polySi gate reference transistors.
  • Keywords
    Annealing; Boron; CMOS technology; Degradation; FETs; Hot carriers; Hydrogen; MOS devices; MOSFETs; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436354
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932435