Title :
Gate oxide integrity and hot-carrier degradation of TaSi2P+ polycide gate MOSFETs
Author :
Schwalke, U. ; Hansch, W. ; Kerber, M. ; Lill, A. ; Neppl, F.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Munich 83, FR Germany; IBM, Essex-Junction, VT 05452, USA
Abstract :
In this contribution we report on boron doped TaSi2/polySi gates which provide low sheet resistance, the appropriate p+ workfunction and simultaneously suppress boron-penetration effects. Gate oxide integrity, hot-carrier degradation and performance of TaSi2 p+ polycide NMOS and PMOS FETs are evaluated and compared to equivalent n+ polySi gate reference transistors.
Keywords :
Annealing; Boron; CMOS technology; Degradation; FETs; Hot carriers; Hydrogen; MOS devices; MOSFETs; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
