High frequency filters with semiconductor heterostructures

Author

Niculescu, Ana ; Petrescu, Teodor

Volume

1

fYear

2001

fDate

2001

Firstpage

141

Abstract

The transmission line analogy method is used to study the transfer function of the broad bandwidth filters obtained with GaAs-Al_xGa_1-xAs triangular barrier structures (TBSs) and multiple barrier structures. The FTS→FOB (lumped element high-pass to forbidden range) transition obtained by the change of the quantum well thickness in multiple barrier structures is analyzed. Also, the paper proposes a simple method for the design of the high-pass Cebisev I infrared range filter by utilizing 3D representations

Keywords

Chebyshev filters; III-V semiconductors; aluminium compounds; gallium arsenide; high-pass filters; microwave filters; millimetre wave filters; quantum well devices; resonant tunnelling devices; semiconductor quantum wells; submillimetre wave devices; transfer functions; transmission line theory; FTS-FOB transition; GaAs-Al_xGa_1-xAs multiple barrier structures; GaAs-Al_xGa_1-xAs triangular barrier structures; GaAs-AlGaAs; broad bandwidth filters; filter resonant tunneling structures; high frequency filters; high-pass Cebisev infrared filters; lumped element high-pass to forbidden range transition; multiple barrier structures; quantum well thickness; semiconductor heterostructures; transfer function; transmission line analogy method; Bandwidth; Design methodology; Frequency; Quantum mechanics; Resonant tunneling devices; Schrodinger equation; Shape; Submillimeter wave filters; Transfer functions; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967432

Filename

967432