Title :
Ultraviolet exposure activated oxidation of silicon carbide
Author :
Svetlichnyi, Alexander M. ; Polyakov, Vadim V. ; Kocherov, Alexander N.
Author_Institution :
Taganrog State Radiotechnique Univ., Russia
Abstract :
In the present work we have described the influence of activated oxygen particles on the oxidation speed of silicon carbide (SiC). It is stated that in comparison with usual oxidation, the oxidation speed with the use of ultraviolet exposure is increased by 1.3 times. A mathematical model of silicon carbide oxidation is investigated.
Keywords :
oxidation; oxygen; silicon compounds; thermodynamics; ultraviolet radiation effects; wide band gap semiconductors; O2; SiC; SiC oxidation speed; UV exposure; activated oxidation model; activated oxygen; silicon carbide; thermodynamic analysis; ultraviolet exposure; Chemical analysis; Equations; Mathematical model; Oxidation; Semiconductor device manufacture; Semiconductor devices; Semiconductor materials; Silicon carbide; Temperature distribution; Wideband;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224179
