• DocumentCode
    1932465
  • Title

    Ultraviolet exposure activated oxidation of silicon carbide

  • Author

    Svetlichnyi, Alexander M. ; Polyakov, Vadim V. ; Kocherov, Alexander N.

  • Author_Institution
    Taganrog State Radiotechnique Univ., Russia
  • fYear
    2003
  • fDate
    1-4 July 2003
  • Firstpage
    46
  • Lastpage
    48
  • Abstract
    In the present work we have described the influence of activated oxygen particles on the oxidation speed of silicon carbide (SiC). It is stated that in comparison with usual oxidation, the oxidation speed with the use of ultraviolet exposure is increased by 1.3 times. A mathematical model of silicon carbide oxidation is investigated.
  • Keywords
    oxidation; oxygen; silicon compounds; thermodynamics; ultraviolet radiation effects; wide band gap semiconductors; O2; SiC; SiC oxidation speed; UV exposure; activated oxidation model; activated oxygen; silicon carbide; thermodynamic analysis; ultraviolet exposure; Chemical analysis; Equations; Mathematical model; Oxidation; Semiconductor device manufacture; Semiconductor devices; Semiconductor materials; Silicon carbide; Temperature distribution; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0412-4
  • Type

    conf

  • DOI
    10.1109/SREDM.2003.1224179
  • Filename
    1224179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932465