Title :
Annealing of fixed oxide charge induced by hot-carrier stressing
Author :
Brox, M. ; Weber, W.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto Hahn Ring 6, 8000 Mÿnchen 83, FRG
Abstract :
A study on electric-field-assisted annealing of transistor degradation has been performed on hot-carrier degraded n- and p-channel Si- MOSFETs. Distinct recovery is found following stressing conditions which lead to accumulation of fixed charge in the gate oxide. Agreement is obtained with previous studies on hole-detrapping following ionizing radiation. Results on p-MOSFETs support the view that very thin oxides are resistant to degradation.
Keywords :
Annealing; Character generation; Charge carrier processes; Degradation; Electron traps; Hot carrier effects; Hot carriers; Lead compounds; MOSFET circuits; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
