Title :
About application of a spectral method for in situ of measurement of silicon etch rate in CCl2F2/O2 plasma
Author :
Bogomolov, Boris K. ; Sirota, Alexandr N.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The physical basis of a method of optical actinometry is considered. The preliminary outcome of research of a spectral emission type etching rate sensor are adduced. The linear dependence of etch rate of single-crystal silicon from the sensor current is obtained.
Keywords :
elemental semiconductors; radiometry; silicon; spectroscopy; sputter etching; CCl2F2/O2 plasma; Si; emission spectroscopy; in situ silicon etch rate measurement; low-temperature plasma etching; optical actinometry; sensor current etch rate linear dependence; single-crystal silicon; spectral emission type etching rate sensor; Atom optics; Etching; Optical films; Optical sensors; Plasma applications; Plasma density; Plasma measurements; Plasma temperature; Silicon; Stimulated emission;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224181
