DocumentCode :
1932565
Title :
Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor on
Author :
Li, W.Q. ; Bhattacharya, P.
Author_Institution :
Department of Electrical Engineering and Computer Science, The University of Michigan
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Capacitance-voltage characteristics; Doping profiles; Frequency; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Microelectronics; Molecular beam epitaxial growth; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664722
Filename :
664722
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1932565
بازگشت