• DocumentCode
    1932588
  • Title

    A study of multiplication-induced breakdown in buried-channel p-MOSFFTs

  • Author

    Skotnicki, T. ; Merckel, G. ; Merrachi, A.

  • Author_Institution
    CNET-CNS; B.P. 98; 28, chemin du Vieux Chêne; 38243 Meylan; France.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    The multiplication-induced breakdown (MIB) in buried-channel (BC) P-MOSFETs is studied by means of numerical simulation, thus leading to a better comprehension of its physical mechanism. On this basis an analytical model is derived and verified according to measured breakdown characteristics. The very good accuracy of the model (error of the order of 5%) is demonstrated.
  • Keywords
    Electric breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932588