Innovative T/R module in state-of-the-art GaN technology

In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC front-end chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be illustrated by means of a preliminary innovative module architecture which foresees the elimination of more traditional T7R module components such as ferrite circulator and limiter for front-end signal routing and protection.