DocumentCode :
1932617
Title :
Electrical characterisation of ferroelectric thin films for integration into VLSI
Author :
Swanston, D.M. ; Johnson, D.J. ; Amm, D.T. ; Griswold, E. ; Sayer, M.
Author_Institution :
Department of Physics, Queen´´s University, Kingston, Ontario CANADA K7L 3N6
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
273
Lastpage :
276
Abstract :
A variety of electrical measurements for the characterization of ferroelectric thin films are presented. Particular attention is given to experimental details and sample properties that can lead to erroneous results. Ferroelectric fatigue is demonstrated as an end use of a fully characterized system.
Keywords :
Capacitance measurement; Charge measurement; Current measurement; Dielectric measurements; Energy measurement; Ferroelectric materials; Hysteresis; Pulse measurements; Transistors; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436361
Link To Document :
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