DocumentCode
1932623
Title
High-quality factor MEMS based oscillator
Author
Conte, Fabrizio Lo ; Grogg, Daniel ; Ionescu, Adrian Mihai ; Kayal, Maher
Author_Institution
Electron. Lab., EPFL, Lausanne, Switzerland
fYear
2009
fDate
25-27 June 2009
Firstpage
276
Lastpage
281
Abstract
In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4 MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic gain for oscillator design is analyzed and an oscillator design is proposed based on these findings. The reported oscillator performance shows the advantages of an active MEM resonator for the construction of MEM based oscillators with respect to the reduced requirements on the electronics.
Keywords
Q-factor; field effect transistors; micromechanical resonators; oscillators; MEMS based oscillator; active MEMS resonator; frequency 9.4 MHz; intrinsic gain; quality factor; vibrating body field effect transistor; Micromechanical devices; Oscillators; Active MEMS; Phase Noise; Resonator; Tunable Oscillator; Tuning Fork;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference
Conference_Location
Lodz
Print_ISBN
978-1-4244-4798-5
Electronic_ISBN
978-83-928756-1-1
Type
conf
Filename
5289466
Link To Document