Title :
Optimization of InGaAsN on GaAs(111)B for semiconductor laser devices
Author :
Miguel-Sánchez, J. ; Guzman, Armando ; Ulloa, J.M. ; Hierro, A. ; Munoz, Eugenio
Author_Institution :
Dept. de Ingenieria Electronica, Univ. Politecnica de Madrid, Spain
Abstract :
In this work we present our contribution to the optimization of the InGaAsN material grown on misoriented GaAs(111)B substrates. We show the improvement of optical quality after characterization and optimization of plasma parameters. In addition, our growth procedure to avoid N induced damage on the surface is presented. Finally, we show the improvement in the optical emission of InGaAsN p-i-n diodes after post-growth rapid thermal annealing. Our results show that the quality of the material is high enough to start to develop laser devices based on InGaAsN on GaAs(111)B.
Keywords :
III-V semiconductors; boron compounds; gallium arsenide; indium compounds; optimisation; p-i-n diodes; rapid thermal annealing; semiconductor growth; semiconductor lasers; substrates; InGaAsN-GaAsB; growth procedure; optical emission; optical quality; p-i-n diodes; plasma parameters optimization; rapid thermal annealing; semiconductor laser devices; Gallium arsenide; Nitrogen; Optical materials; Plasma materials processing; Plasma temperature; Plasma x-ray sources; Semiconductor lasers; Stimulated emission; Substrates; Surface emitting lasers;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504392
