Title :
Electron conduction and charge trapping behaviour of SiO2 prepared by plasma anodisation
Author :
Zhang, J.F. ; Watkinson, P. ; Taylor, S. ; Eccleston, W. ; Young, N.D.
Author_Institution :
Department of Electrical Engineering and Electronics, University of Liverpool, P.O. Box 147, Liverpool, L69 3BX.
Abstract :
Fowler-Nordheim tunneling of electrons dominates the electron conduction mechanism in low temperature plasma grown silicon dioxide. Avalanche injection studies yield typical trap capture cross-sections of 10-15 and 10-17 cm2 following anodisation. If a high temperature post-oxidation anneal is used then the only capture cross-section observed has a value 10-18 cm2.
Keywords :
Electron traps; Oxidation; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Temperature dependence; Temperature distribution; Thermal conductivity; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
