Hot electron effects modeling in short channel MOST using a program package TCAD ISE

Author

Vorocheikin, Daniil V. ; Petrov, Alexey V. ; Makarov, Evgeny A.

Author_Institution

Novosibirsk State Tech. Univ., Russia

fYear

2003

fDate

1-4 July 2003

Firstpage

69

Lastpage

71

Abstract

The purpose of our work was the development of a system of semiconductor structure modeling and the creation of IC elements for ISE AG (integrated systems engineering). The system represents an example of IT network technology. The open operating system LINUX supervises and supports the work of a network of computers, on each of which a complete or partially package of the applied TCAD program (technology computer aided design) is established.

Keywords

MOSFET; hot carriers; operating systems (computers); semiconductor device models; technology CAD (electronics); IC element creation; IT network technology; LINUX open operating system; MOS transistor; MOST modeling; TCAD; TCAD ISE; electron temperature; hot electron effects; integrated systems engineering; semiconductor structures modeling; short channel MOST; technology computer aided design; Computer networks; Electrons; Hydrodynamics; Impurities; Integrated circuit modeling; Integrated circuit packaging; Integrated circuit technology; Power system modeling; Semiconductor device packaging; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on

Print_ISBN

5-7782-0412-4

Type

conf

DOI

10.1109/SREDM.2003.1224187

Filename

1224187