DocumentCode :
1932698
Title :
Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Author :
Bengtsson, Stefan ; Engstrom, Olof
Author_Institution :
Department of Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
1
Lastpage :
4
Abstract :
Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs applied voltage.
Keywords :
Bonding; Capacitance measurement; Current measurement; Density measurement; Electric variables measurement; Electrons; Interface states; Photonic band gap; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436364
Link To Document :
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