• DocumentCode
    1932698
  • Title

    Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces

  • Author

    Bengtsson, Stefan ; Engstrom, Olof

  • Author_Institution
    Department of Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs applied voltage.
  • Keywords
    Bonding; Capacitance measurement; Current measurement; Density measurement; Electric variables measurement; Electrons; Interface states; Photonic band gap; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932698