Title :
Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Author :
Bengtsson, Stefan ; Engstrom, Olof
Author_Institution :
Department of Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
Abstract :
Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs applied voltage.
Keywords :
Bonding; Capacitance measurement; Current measurement; Density measurement; Electric variables measurement; Electrons; Interface states; Photonic band gap; Silicon; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England