Title :
Crystallographic aspects of silicon anisotropic etching
Author :
Dikareva, Regina P. ; Zaozemova, S.V. ; Kamenskaya, Anna V. ; Langyeva, Daria A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In this work, research of anisotropic etching (AE) of silicon for the determination of the dominant crystallographic planes, which form islands and etching holes is represented.
Keywords :
elemental semiconductors; etching; island structure; semiconductor process modelling; silicon; Si; dominant crystallographic planes; etching holes; islands; silicon anisotropic etching; Anisotropic magnetoresistance; Biomembranes; Crystallography; Data analysis; Etching; Helium; Information analysis; Manufacturing; Paints; Silicon;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224188
