• DocumentCode
    1932700
  • Title

    Crystallographic aspects of silicon anisotropic etching

  • Author

    Dikareva, Regina P. ; Zaozemova, S.V. ; Kamenskaya, Anna V. ; Langyeva, Daria A.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2003
  • fDate
    1-4 July 2003
  • Firstpage
    72
  • Lastpage
    73
  • Abstract
    In this work, research of anisotropic etching (AE) of silicon for the determination of the dominant crystallographic planes, which form islands and etching holes is represented.
  • Keywords
    elemental semiconductors; etching; island structure; semiconductor process modelling; silicon; Si; dominant crystallographic planes; etching holes; islands; silicon anisotropic etching; Anisotropic magnetoresistance; Biomembranes; Crystallography; Data analysis; Etching; Helium; Information analysis; Manufacturing; Paints; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0412-4
  • Type

    conf

  • DOI
    10.1109/SREDM.2003.1224188
  • Filename
    1224188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932700