Title :
Hot-carrier induced degradation in short-channel silicon-on-insulator MOSFETs
Author :
Ouisse, T. ; Cristoloveanu, S. ; Reimbold, G. ; Borel, G.
Author_Institution :
Thomson-TMS, BP 123, 38521 Saint-Egrÿve Cedex, France.
Abstract :
Submicron MOSFET´s fabricated on SIMOX substrates present a good tolerance to aging induced by hot carrier injection in the front gate oxide. Stressing the back channel reveals the formation of localized defects at the buried interface which are responsible for a large transconductance overshoot and an attenuation of the kink effect.
Keywords :
Aging; Attenuation; Current measurement; Degradation; Hot carriers; MOSFETs; Silicon on insulator technology; Stress; Substrates; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
