• DocumentCode
    1932712
  • Title

    Hot-carrier induced degradation in short-channel silicon-on-insulator MOSFETs

  • Author

    Ouisse, T. ; Cristoloveanu, S. ; Reimbold, G. ; Borel, G.

  • Author_Institution
    Thomson-TMS, BP 123, 38521 Saint-Egrÿve Cedex, France.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    257
  • Lastpage
    260
  • Abstract
    Submicron MOSFET´s fabricated on SIMOX substrates present a good tolerance to aging induced by hot carrier injection in the front gate oxide. Stressing the back channel reveals the formation of localized defects at the buried interface which are responsible for a large transconductance overshoot and an attenuation of the kink effect.
  • Keywords
    Aging; Attenuation; Current measurement; Degradation; Hot carriers; MOSFETs; Silicon on insulator technology; Stress; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1932712