Title :
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Presents the front cover of the GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 proceedings.
Keywords :
III-V semiconductors; MIMIC; MMIC; asynchronous transfer mode; data communication; data conversion; field effect transistors; frequency convertors; gallium arsenide; heterojunction bipolar transistors; integrated circuit packaging; microwave transistors; millimetre wave transistors; monolithic integrated circuits; optical communication equipment; personal communication networks; power amplifiers; power integrated circuits; semiconductor device packaging; semiconductor device reliability; semiconductor technology; signal generators; ATM switching; FET power issues; FET processing; FET reliability; GaAs; GaAs ICs; HBT power issues; HBT processing; HBT reliability; data communication; data conversion; frequency conversion MMICs; high power amplifiers; manufacturing; materials; millimeter wave applications; optical communications circuits; packaging; personal communication systems; power IC; signal control; signal generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528947
