Rib waveguides containing Si nanocrystals embedded in SiO/sub 2/ for optical communication in the visible range

We present a study on characterization and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900 nm spectral range. The active layer was produced by Si ⁺ ion implantation into SiO ₂. Si-ncs were precipitated by annealing at 1100 °C, forming a 0.4 μm thick core layer in the waveguide. The Si-nc density, size and visible emission and the effective refractive index of the active layer were determined by dedicated experiments. Light propagation in the waveguide was observed at 633 and 780 nm and losses of about 10 dB/cm were been related to specific contributions, mostly geometric-related, and asymptotic values of 2 dB/cm for Mie scattering and 4 dB/cm for direct absorption were evaluated, which are promising for the feasibility of a competitive optical amplifier.