Title :
New application of surface-barrier GaP photodiodes
Author :
Malik, A. ; Vygranenko, Yu. ; Shabashkevich, B. ; Piroszenko, S.
Author_Institution :
Electron. Dept, INAOE, Puebla, Mexico
Abstract :
This work investigates a quantum efficiency control in surface-barrier photodiodes fabricated by deposition of ITO or FTO thin films onto epitaxial n-n+-GaP. It is shown that ITO (or FTO)/GaP photodiodes are extremely attractive for UV instrumentation due to high detectivity D* up to 1015 cm·Hz1/2/W and production simplicity. The optical properties of heterojunction interface are studied based on the optical properties of fluorine-doped tin oxide (FTO) or tin-doped indium oxide (ITO) films, and GaP-epitaxial layer. The efficiency of Au/GaP Schottky photodiodes is analyzed too for comparison. The design of simple, hand-held UV radiometer for quick and accurate measurements using designed novel GaP photodetectors is described also
Keywords :
III-V semiconductors; gallium compounds; photodiodes; photometers; semiconductor epitaxial layers; ultraviolet detectors; Au/GaP Schottky photodiode; FTO thin film; GaP epitaxial layer; GaP-SnO2:F; GaP-SnO2:In; ITO thin film; UV photodetector; hand-held UV radiometer; heterojuncton interface; optical properties; quantum efficiency; surface-barrier GaP photodiode; Gold; Heterojunctions; Indium tin oxide; Instruments; Optical films; Photodiodes; Production; Radiometry; Sputtering; Ultraviolet sources;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967442
