DocumentCode :
1932892
Title :
Self-contained error-compensated N-valued memory for neural applications
Author :
Pedroni, Volnei A.
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear :
1994
fDate :
26-28 Sep 1994
Firstpage :
152
Lastpage :
155
Abstract :
One of the main challenges faced in VLSI implementations of neural networks and other massively parallel analog signal processing systems is the long-term local storage of analog information. The author presents a self-contained multilevel memory which is capable of retaining an analog value indefinitely and has a built-in error control mechanism to give the system robustness against noise. The implementation requires small silicon area and the cells are modular to permit direct pile up
Keywords :
VLSI; analogue storage; neural chips; VLSI implementations; analog information; error control mechanism; long-term local storage; massively parallel analog signal processing systems; multilevel memory; neural networks; self-contained error-compensated N-valued memory; Analog memory; Capacitors; Circuits; Clocks; Neural networks; Quantization; Silicon; Switches; Virtual colonoscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics for Neural Networks and Fuzzy Systems, 1994., Proceedings of the Fourth International Conference on
Conference_Location :
Turin
Print_ISBN :
0-8186-6710-9
Type :
conf
DOI :
10.1109/ICMNN.1994.593244
Filename :
593244
Link To Document :
بازگشت