DocumentCode :
1932913
Title :
Reduction of Low-Frequency Noise in Npn Aigaas/gaas HBTs
Author :
Costa, D. ; Liu, W.U. ; Harris, J.S.
Author_Institution :
Stanford University, CA
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Current density; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Noise shaping; Shape measurement; Signal to noise ratio; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664723
Filename :
664723
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1932913
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