A simple model to analyze electron confinement and trapping in silicon nanodots

Author

Villanueva, Juan A López ; Tejada, Juan A Jiménez ; Palma, Alberto ; Bolívar, Salvador Rodríguez ; Carceller, Juan E.

Author_Institution

Dept. de Electronica y Tecnologia de Computadores, Univ. de Granada, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

345

Lastpage

348

Abstract

A procedure has been developed for analyzing charge confinement and trapping processes in silicon nanodots embedded in the oxide of a metal-oxide-semiconductor structure. The electron levels and envelope functions in both the 2DEG in the silicon substrate and the ODEG in the nanodot have been computed by self-consistently solving the Poisson and Schrodinger equations, including non-parabolicity corrections. The transfer probabilities between the two systems have been evaluated with the Bardeen formalism by adapting a procedure previously used in quantum-dot lasers.

Keywords

MIS structures; Poisson equation; Schrodinger equation; circuit simulation; electron traps; elemental semiconductors; silicon; 2DEG; Bardeen formalism; ODEG; Poisson equation; Schrodinger equations; Si; charge confinement; electron confinement; electron trapping; metal-oxide-semiconductor structure; non-parabolicity corrections; quantum-dot lasers; silicon nanodots; Analytical models; Computational modeling; Electron traps; Geometrical optics; Nonvolatile memory; Quantum dot lasers; Quantum dots; Schrodinger equation; Silicon; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504400

Filename

1504400