Title :
2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)
Author :
Udrea, F. ; Amaratunga, G.A.J.
Author_Institution :
Department of Engineering, Cambridge University, Cambridge CB2 1PZ, England
Abstract :
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are carried out. It is concluded that an optimised Trench IGBT is potentially the leading structure of the next generation of high voltage devices.
Keywords :
Analytical models; Anodes; Cathodes; Dielectrics and electrical insulation; Diodes; Insulated gate bipolar transistors; Mathematical model; Numerical models; Numerical simulation; Spontaneous emission;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
