Title :
Electron injection model for quantized systems: application to Monte Carlo simulation of nanometric MOSFETs
Author :
Fernàndez-Díaz, Eduard ; Oriols, Xavier
Author_Institution :
Dept. of Electr., Univ. Autonoma de Barcelona, Catalonia, Spain
Abstract :
This work presents a general model for the electron injection from contacts into a device active region. The model is developed for cases where the electrons are confined in one or several directions. The implementation of the approach within the semiconductor Monte Carlo technique is discussed. The present contact model can be applied for non-degenerate or degenerate statistics. As an example, we apply our method to a quantum well nano-MOSFET.
Keywords :
MOSFET; Monte Carlo methods; nanoelectronics; quantum well devices; semiconductor device models; Monte Carlo simulation; contact model; electron injection model; nanometric MOSFET; non-degenerate/degenerate statistics; quantized systems; quantum well nano-MOSFET; Conductors; Contacts; Electronic mail; Electrons; MOSFETs; Nanoscale devices; Quantization; Reservoirs; Statistics; Wave functions;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504403
