DocumentCode
1933058
Title
Silicon light emitting devices in standard CMOS technology
Author
Du Plessis, Monuko ; Aharoni, Herzl ; Snyman, Lukas W.
Author_Institution
Carl & Emily Fuchs Inst. for Microelectron., Pretoria Univ., South Africa
Volume
1
fYear
2001
fDate
2001
Firstpage
231
Abstract
Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED´s will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications
Keywords
CMOS integrated circuits; elemental semiconductors; light emitting devices; silicon; CMOS technology; Si; Si-LED; photon emission; reverse biased silicon p-n junction; silicon integrated circuit; silicon light emitting device; Africa; Application software; Application specific integrated circuits; BiCMOS integrated circuits; CMOS process; CMOS technology; Integrated circuit technology; Potential well; Semiconductor superlattices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967453
Filename
967453
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