Influence of MOSFET parameter extraction in distortion analysis using SPICE

Author

García-Moreno, E. ; Picos, R. ; Roca, M. ; Suenaga, K.

Author_Institution

Dept. of Phys., Univ. de les Illes Balears, Ctra Valldemossa, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

369

Lastpage

372

Abstract

The effect of MOSFET model parameters on distortion analysis of a class A amplifier is examined. Derivatives of the drain current, transconductance and output conductance are dominant factors in harmonic distortion. Model parameter affecting these derivatives are described, then the sensitivity of the amplifier nonlinearity figures (P_1dB and IIP3) to the variations of these parameters is analyzed. Simulation results are validated through measurements using AMS 0.35μm technology devices.

Keywords

MOSFET; SPICE; distortion measurement; harmonic distortion; parameter estimation; radiofrequency amplifiers; semiconductor device models; sensitivity analysis; 0.35 micron; MOSFET parameter extraction; SPICE; class A amplifier; distortion analysis; drain current; harmonic distortion; model parameter effects; output conductance; sensitivity; transconductance; Circuit simulation; Distortion measurement; Harmonic distortion; MOSFET circuits; Parameter extraction; Power amplifiers; Radio frequency; Radiofrequency amplifiers; SPICE; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504407

Filename

1504407