DocumentCode :
1933074
Title :
Influence of MOSFET parameter extraction in distortion analysis using SPICE
Author :
García-Moreno, E. ; Picos, R. ; Roca, M. ; Suenaga, K.
Author_Institution :
Dept. of Phys., Univ. de les Illes Balears, Ctra Valldemossa, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
369
Lastpage :
372
Abstract :
The effect of MOSFET model parameters on distortion analysis of a class A amplifier is examined. Derivatives of the drain current, transconductance and output conductance are dominant factors in harmonic distortion. Model parameter affecting these derivatives are described, then the sensitivity of the amplifier nonlinearity figures (P 1dB and IIP3) to the variations of these parameters is analyzed. Simulation results are validated through measurements using AMS 0.35μm technology devices.
Keywords :
MOSFET; SPICE; distortion measurement; harmonic distortion; parameter estimation; radiofrequency amplifiers; semiconductor device models; sensitivity analysis; 0.35 micron; MOSFET parameter extraction; SPICE; class A amplifier; distortion analysis; drain current; harmonic distortion; model parameter effects; output conductance; sensitivity; transconductance; Circuit simulation; Distortion measurement; Harmonic distortion; MOSFET circuits; Parameter extraction; Power amplifiers; Radio frequency; Radiofrequency amplifiers; SPICE; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504407
Filename :
1504407
Link To Document :
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