Title :
High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Author :
Paraskevopoulos, A. ; Bach, H.-G. ; Schroeter-JanBen, H. ; Mekonnen, G. ; Hensel, H.J. ; Grote, N.
Author_Institution :
Heinrich-Hertz-Institut f?r Nachrichtentechnik ik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, F.R.G.
Abstract :
In this paper we report on invertible DHBTs fabricated on GaInAsP/InP. Localized Zn diffusion allowed for practically equal active transistor areas in the forward and inverse mode. Transit frequencies up to 6 GHz with collector currents over 100mA could be demonstrated on these devices. As an application, three transistors were monolithically integrated to form a laser driver circuit showing modulation rates up to 2.6 Gbit/s.
Keywords :
Bipolar transistors; Circuit simulation; Contact resistance; Double heterojunction bipolar transistors; Driver circuits; Etching; Frequency; Indium phosphide; Surface emitting lasers; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
