Title :
Monte Carlo simulation of velocity modulation transistors
Author :
Sampedro, C. ; Godoy, A. ; Gámiz, F. ; Roldán, J.B. ; Carceller, J.E. ; Cartujo, P.
Author_Institution :
Dept. de Electronica y Tecnologia de Computadores, Univ. de Granada, Spain
Abstract :
An ensemble Monte Carlo simulator has been developed to study the possibility that double gate silicon on insulator (DGSOI) transistor could operate as a velocity modulation transistor (VMT). Stationary and transient behaviors have been analyzed. As the main goal of this work, the authors have focused on the time necessary to transfer the charge from one channel to the other since this time will determine the frequency range of operation of the device.
Keywords :
MOSFET; Monte Carlo methods; carrier mobility; circuit simulation; modulation; silicon-on-insulator; Monte Carlo simulation; double gate silicon on insulator; stationary behaviors; transient behaviors; velocity modulation transistors; Computational modeling; Degradation; Electron mobility; FETs; Frequency; MOSFET circuits; Monte Carlo methods; Silicon on insulator technology; Switches; Transient analysis;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504409
