DocumentCode
1933158
Title
Frequency performances of MOS compatible silicon permeable base transistors and comparison with simulation results
Author
Mouis, M. ; Letourneau, P. ; Vincent, G.
Author_Institution
Institut d´´Electronique Fondamentale, CNRS URA 22, F91405 Orsay Cedex, France.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
37
Lastpage
40
Abstract
Permeable Base Transistors (PBTs) with gate periodicity down to 0.6 ¿m have been fabricated using a MOS technology process. Both static and microwave measurements have been performed. The results obtained on the smallest structures are presented and compared with two-dimensional simulations.
Keywords
Capacitance measurement; Frequency measurement; MOSFETs; Microwave measurements; Microwave technology; Performance evaluation; Plasma simulation; Platinum; Silicon; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436387
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