• DocumentCode
    1933182
  • Title

    Design simulation and measurement of high efficiency microwave power heterojunction bipolar transistors

  • Author

    Metcalfe, J.G. ; Allen, R W ; Holden, A.J. ; Long, A P ; Nicklin, R.

  • Author_Institution
    Plessey Research Caswell Ltd., Towcester, Northants., NN12 8EQ, England.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    In this paper we describe the design, simulation and measured performance of high efficiency power HBTs. Devices with emitter lengths of 1.7mm operated under pulse bias (0.2¿s, 1% duty cycle) can deliver output powers at 1 dB gain compression of up to 8W at 4GHz. The associated gain is 5dB and the peak power added efficiency around 40%. This represents the highest power reported for a power HBT.
  • Keywords
    Capacitance measurement; Current measurement; Density measurement; Frequency measurement; Heterojunction bipolar transistors; Microwave measurements; Power measurement; Pulse measurements; Signal design; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933182