Title :
Design simulation and measurement of high efficiency microwave power heterojunction bipolar transistors
Author :
Metcalfe, J.G. ; Allen, R W ; Holden, A.J. ; Long, A P ; Nicklin, R.
Author_Institution :
Plessey Research Caswell Ltd., Towcester, Northants., NN12 8EQ, England.
Abstract :
In this paper we describe the design, simulation and measured performance of high efficiency power HBTs. Devices with emitter lengths of 1.7mm operated under pulse bias (0.2¿s, 1% duty cycle) can deliver output powers at 1 dB gain compression of up to 8W at 4GHz. The associated gain is 5dB and the peak power added efficiency around 40%. This represents the highest power reported for a power HBT.
Keywords :
Capacitance measurement; Current measurement; Density measurement; Frequency measurement; Heterojunction bipolar transistors; Microwave measurements; Power measurement; Pulse measurements; Signal design; Solid modeling;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
