Title :
On-resistance analysis in trench power MOSFETs with fully depletion between trenches
Author :
Roig, J. ; Flores, D. ; Jimenez, Daniel ; Iñiguez, B. ; Hidalgo, Soraya ; Rebollo, J.
Author_Institution :
Centre Nacional de Microelectron., Barcelona, Spain
Abstract :
This paper aims to provide a specific on-resistance (R ONxS) study in trench power MOSFET structures with a distance between trenches (D trench) in the submicron range. Theoretical and simulation results show the influence of the fully depletion between the two gates on the R ONxS value. Hence, the different components of R ONxS are separately analyzed and modelled in order to find their dependency with D trench.
Keywords :
contact resistance; numerical analysis; power MOSFET; semiconductor device models; depletion; on-resistance analysis; trench power MOSFET; Current density; Differential equations; Doping; Electric resistance; MOSFETs; Neodymium; Numerical simulation; Scalability; Semiconductor process modeling; Solid modeling;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504411
