• DocumentCode
    1933221
  • Title

    On-resistance analysis in trench power MOSFETs with fully depletion between trenches

  • Author

    Roig, J. ; Flores, D. ; Jimenez, Daniel ; Iñiguez, B. ; Hidalgo, Soraya ; Rebollo, J.

  • Author_Institution
    Centre Nacional de Microelectron., Barcelona, Spain
  • fYear
    2005
  • fDate
    2-4 Feb. 2005
  • Firstpage
    385
  • Lastpage
    388
  • Abstract
    This paper aims to provide a specific on-resistance (R ONxS) study in trench power MOSFET structures with a distance between trenches (D trench) in the submicron range. Theoretical and simulation results show the influence of the fully depletion between the two gates on the R ONxS value. Hence, the different components of R ONxS are separately analyzed and modelled in order to find their dependency with D trench.
  • Keywords
    contact resistance; numerical analysis; power MOSFET; semiconductor device models; depletion; on-resistance analysis; trench power MOSFET; Current density; Differential equations; Doping; Electric resistance; MOSFETs; Neodymium; Numerical simulation; Scalability; Semiconductor process modeling; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2005 Spanish Conference on
  • Conference_Location
    Tarragona
  • Print_ISBN
    0-7803-8810-0
  • Type

    conf

  • DOI
    10.1109/SCED.2005.1504411
  • Filename
    1504411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933221