Optimal well design for triple-well CMOS digital circuits with back-biasing V/sub T/ control

A model of the substrate well in circuits implemented in a triple-well deep-submicron technology is presented. This model takes into account the distributed nature of the well and the distance of the bulk of each transistor from the well contacts. The model is applied to CMOS standard-cell circuits with back-biasing VT control to study the impact of the number of gates placed in the same well and the well contacts´ placement, and the resistance between the well contacts and the bulk of the transistors. The lumped equivalent network of the well is derived as a function of the number of gates in the well and the results of simulations of the circuit-in-the-well lead to guidelines for optimal well sizing and contact placement. The performance and power consumption of logic circuits is analyzed leading to conclusions for optimal design and layout.