Title :
Physics-based model of the surrounding-gate MOSFET
Author :
Jiménez, D. ; Iniguez, B. ; Roig, J. ; Suñ, J. ; Marsal, Lluis F. ; Pallares, J. ; Flores, D.
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
Abstract :
A continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs is described. It is based on the exact solution of the Poisson´s equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. This model correctly traces the transition between the different operation regions without resorting to fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. The authors demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages.
Keywords :
MOSFET; Poisson equation; numerical analysis; semiconductor device models; Poisson equation; current continuity; inversion charge distribution; physics based model; surrounding gate MOSFET; Boundary conditions; CMOS technology; Electronic mail; Electrons; Kernel; MOSFET circuits; Poisson equations; Semiconductor device modeling; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504413
