Physics-based model of the surrounding-gate MOSFET

Author

Jiménez, D. ; Iniguez, B. ; Roig, J. ; Suñ, J. ; Marsal, Lluis F. ; Pallares, J. ; Flores, D.

Author_Institution

Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

393

Lastpage

396

Abstract

A continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs is described. It is based on the exact solution of the Poisson´s equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. This model correctly traces the transition between the different operation regions without resorting to fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. The authors demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages.

Keywords

MOSFET; Poisson equation; numerical analysis; semiconductor device models; Poisson equation; current continuity; inversion charge distribution; physics based model; surrounding gate MOSFET; Boundary conditions; CMOS technology; Electronic mail; Electrons; Kernel; MOSFET circuits; Poisson equations; Semiconductor device modeling; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504413

Filename

1504413