Title :
Modelling the parasitic effects in GaAs/GaAlAs heterojunction bipolar transistors
Author :
Dungla, J. ; Filoche, M. ; Koncyzkowska, A. ; Caquot, E.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux 196, rue H. Ravera, 92220 BAGNEUX, FRANCE
Abstract :
A modelling approach and an experimental characterization of various GaAs/GaAlAs HBT parasitic effects are presented. They include the emitter base offset voltage, resistance effects, recombination currents and the outdiffusion of the p-dopant.
Keywords :
Bipolar transistors; Contact resistance; Doping; Equations; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Logic devices; Thermal resistance; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
