• DocumentCode
    1933329
  • Title

    Study of the amorphous phase of silicon using molecular dynamics simulation techniques

  • Author

    Marqués, Luis A. ; Pelaz, Lourdes ; Santos, Iván ; Bailón, Luis ; Barbolla, Juan

  • Author_Institution
    Departamento de Electronica, Univ. de Valladolid, Spain
  • fYear
    2005
  • fDate
    2-4 Feb. 2005
  • Firstpage
    405
  • Lastpage
    408
  • Abstract
    The authors have used molecular dynamics simulation techniques to study the properties of the amorphous phase of silicon. Several amorphous silicon samples have been prepared at different temperatures. The changes in the density, internal energy, structure, diffusion coefficients and recrystallization behavior of the amorphous phase have been extracted from the simulations as a function of temperature. The analysis of the results showed that, for temperatures between the amorphous and crystal melting points, there exists an intermediate phase which shares some of the properties of the amorphous and liquid silicon.
  • Keywords
    molecular dynamics method; noncrystalline structure; recrystallisation; semiconductor process modelling; Si; amorphous phase; density; diffusion coefficients; intermediate phase; internal energy; molecular dynamics simulation; recrystallization behavior; structure; Amorphous materials; Amorphous silicon; Computational modeling; Crystalline materials; Integrated circuit manufacture; Optical materials; Space heating; Substrates; Telecommunications; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2005 Spanish Conference on
  • Conference_Location
    Tarragona
  • Print_ISBN
    0-7803-8810-0
  • Type

    conf

  • DOI
    10.1109/SCED.2005.1504416
  • Filename
    1504416