DocumentCode :
1933329
Title :
Study of the amorphous phase of silicon using molecular dynamics simulation techniques
Author :
Marqués, Luis A. ; Pelaz, Lourdes ; Santos, Iván ; Bailón, Luis ; Barbolla, Juan
Author_Institution :
Departamento de Electronica, Univ. de Valladolid, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
405
Lastpage :
408
Abstract :
The authors have used molecular dynamics simulation techniques to study the properties of the amorphous phase of silicon. Several amorphous silicon samples have been prepared at different temperatures. The changes in the density, internal energy, structure, diffusion coefficients and recrystallization behavior of the amorphous phase have been extracted from the simulations as a function of temperature. The analysis of the results showed that, for temperatures between the amorphous and crystal melting points, there exists an intermediate phase which shares some of the properties of the amorphous and liquid silicon.
Keywords :
molecular dynamics method; noncrystalline structure; recrystallisation; semiconductor process modelling; Si; amorphous phase; density; diffusion coefficients; intermediate phase; internal energy; molecular dynamics simulation; recrystallization behavior; structure; Amorphous materials; Amorphous silicon; Computational modeling; Crystalline materials; Integrated circuit manufacture; Optical materials; Space heating; Substrates; Telecommunications; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504416
Filename :
1504416
Link To Document :
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