Title :
Mathematical model of planar small signal SHF transistor for batch production conditions
Author :
Vilmitsky, Dmitry S. ; Likhanov, Yuri M.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
A mathematical model of the technological process scatter influence on the parameters of the equivalent circuit of a transistor is offered. Relying on the presented model, a correlation analysis of transistor equivalent circuit elements was carried out.
Keywords :
correlation methods; equivalent circuits; semiconductor device models; semiconductor process modelling; transistors; batch production conditions; correlation analysis; planar small signal SHF transistor; technological process scatter; transistor equivalent circuit elements; Active noise reduction; Capacitance; Circuit noise; Distributed amplifiers; Equivalent circuits; Mathematical model; Oxidation; Production; Scattering parameters; Temperature;
Conference_Titel :
Electron Devices and Materials, 2003. Proceedings. 4th Annual 2003 Siberian Russian Workshop on
Print_ISBN :
5-7782-0412-4
DOI :
10.1109/SREDM.2003.1224216
