Title :
Numerical Modelling of Magnetic Field Sensitive MOSFET
Author :
Yie, Ho ; Tongli, Wei ; Kechang, Shen
Author_Institution :
Microelectronics Center, Nanjing Institute of Technology, China
Abstract :
A two dimensional numerical modelling of Magnetic-Field-Sensitive MOSFET (MAGFET) is presented and has a small computation cost. The whole operation region of MAGFET is divided into two parts (normal and subthreshold region) and numerically simulated respectively. A conclusion which MAGFET has highest sensitivity when W/L=0.8 is obtained and is verified by experiment.
Keywords :
Boundary conditions; CMOS technology; Differential equations; MOSFET circuits; Magnetic devices; Magnetic fields; Magnetic semiconductors; Numerical models; Partial differential equations; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
