DocumentCode
1933441
Title
Numerical Modelling of Magnetic Field Sensitive MOSFET
Author
Yie, Ho ; Tongli, Wei ; Kechang, Shen
Author_Institution
Microelectronics Center, Nanjing Institute of Technology, China
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
257
Lastpage
260
Abstract
A two dimensional numerical modelling of Magnetic-Field-Sensitive MOSFET (MAGFET) is presented and has a small computation cost. The whole operation region of MAGFET is divided into two parts (normal and subthreshold region) and numerically simulated respectively. A conclusion which MAGFET has highest sensitivity when W/L=0.8 is obtained and is verified by experiment.
Keywords
Boundary conditions; CMOS technology; Differential equations; MOSFET circuits; Magnetic devices; Magnetic fields; Magnetic semiconductors; Numerical models; Partial differential equations; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436397
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