Mechanisms of photoconductivity decay in bulk and porous InP

Author

Calin, Mircea

Author_Institution

Inst. of Appl. Phys., Acad. of Sci., Chisinau, Moldova

Volume

2

fYear

2001

fDate

37165

Firstpage

291

Abstract

The photoconductivity decay (PCD) in different as grown, electron irradiated n-InP and semi-insulating InP:Fe single crystals as well as in porous InP samples was investigated in a temperature interval 100-300 K. The PCD in bulk InP was found to be determined by native defects with the energy level E_c - 0.4 eV. Depending upon the electron irradiation dose, temperature and additional illumination, the level involved proves to be either a recombination one or a trap. In porous samples the PCD is governed by the porosity induced potential barrier pattern

Keywords

III-V semiconductors; defect states; electron beam effects; electron traps; electron-hole recombination; hole traps; indium compounds; iron; photoconductivity; porous semiconductors; 100 to 300 K; InP:Fe; additional illumination; bulk InP; electron irradiated n-InP; electron irradiation dose; energy level; native defects; photoconductivity decay mechanisms; porosity induced potential barrier pattern; porous InP; recombination; semiinsulating InP:Fe; single crystals; trap; Conductivity; Crystals; Electron traps; Energy states; Indium phosphide; Laser excitation; Oscilloscopes; Photoconductivity; Spontaneous emission; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967467

Filename

967467