• DocumentCode
    1933476
  • Title

    Properties of recombination radiation in CdIn2S2 Se2 single crystals

  • Author

    Machuga, A.I. ; Arama, E.D. ; Jitar, V.F. ; Shemyakova, T.D.

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci., Chisinau, Moldova
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    295
  • Abstract
    Recombination characteristics of CdIn2S2Se 2 single crystals have been investigated. The cathodoluminescence spectra show an intensive band with maximum at 1.28 eV (293K). The photoconductivity spectra exhibit the temperature quenching of exponential character. The donor level at 1.55 eV and acceptor level at 0.13 eV have been found out. The interpretation of results is given in comparison with the isomorphous analog ZnIn2 S4(III)
  • Keywords
    cadmium compounds; cathodoluminescence; electron-hole recombination; impurity states; indium compounds; photoconductivity; ternary semiconductors; CdIn2S2Se2; CdIn2S2Se2 single crystals; acceptor level; cathodoluminescence spectra; donor level; exponential character; isomorphous analog; photoconductivity spectra; recombination radiation properties; temperature quenching; Crystallization; Crystals; Frequency measurement; Lattices; Lighting; Photoconductivity; Radiative recombination; Semiconductor materials; Steady-state; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967468
  • Filename
    967468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933476