Title :
Formation of (TixW1-x)Si2/(TixW1-x)N contacts by rapid thermal silicidation
Author :
Norström, H. ; Maex, K. ; Vanhellemont, J. ; Brijs, G. ; Vandervorst, W. ; Smith, U.
Author_Institution :
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, B-3030 Leuven, Belgium.; Royal Institute of Technology, S-16428 Kista, Sweden.
Abstract :
The formation of (TixW1-x)Si2/(TixW1-x)N by rapid thermnal processing of TixW1-x on Si in an N2 ambient is investigated. A distinct snowploughing of As atoms is observed during silicide formation. The diffusion barrier properties of the (TixW1-x)Si2/(TixW1-x)N stack in contact with Al is investigated upon post-metal annealing.
Keywords :
Contact resistance; Diffraction; Electrons; Nitrogen; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicidation; Temperature distribution; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
