• DocumentCode
    1933477
  • Title

    Formation of (TixW1-x)Si2/(TixW1-x)N contacts by rapid thermal silicidation

  • Author

    Norström, H. ; Maex, K. ; Vanhellemont, J. ; Brijs, G. ; Vandervorst, W. ; Smith, U.

  • Author_Institution
    Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, B-3030 Leuven, Belgium.; Royal Institute of Technology, S-16428 Kista, Sweden.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    The formation of (TixW1-x)Si2/(TixW1-x)N by rapid thermnal processing of TixW1-x on Si in an N2 ambient is investigated. A distinct snowploughing of As atoms is observed during silicide formation. The diffusion barrier properties of the (TixW1-x)Si2/(TixW1-x)N stack in contact with Al is investigated upon post-metal annealing.
  • Keywords
    Contact resistance; Diffraction; Electrons; Nitrogen; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicidation; Temperature distribution; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933477