Title :
Contact-related effects on junction behaviour
Author :
Polignano, M.L. ; Circelli, N.
Author_Institution :
SGS-Thomson Microelectronics, 20041 Agrate MI, Italy
Abstract :
The effect of a titanium-titanium nitride (Ti/TiN) barrier metallization on junctions characteristics was studied by comparing diodes of different geometries. An increase of the reverse current of junctions is observed in the presence of contacts when Ti/TiN/Al:Si metallization is used. It has been shown that the reverse current increase is related to contact perimeter, that it is independent of many relevant process steps and it is reduced by thermal treatments after metal deposition.
Keywords :
Contacts; Contamination; Diodes; Geometry; Leakage current; Metallization; Microelectronics; Testing; Tin; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
